GB/T 30654-2014
ActiveTest method for lattice constant of III-nitride epitaxial layers
Ⅲ族氮化物外延片晶格常数测试方法
Application Summary AI generated
This standard specifies the test method for determining the lattice constant of III-nitride epitaxial layers, such as GaN, AlN, and InN, using X-ray diffraction (XRD) techniques. It is applied in the semiconductor and optoelectronics industries to evaluate crystal quality and strain in epitaxial films grown on substrates like sapphire or silicon. The method ensures accurate measurement for quality control in the production of LEDs, laser diodes, and high-power electronic devices.
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